ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,037, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material switch with i... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,038, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Phase-change random access memo... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,039, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Bonding apparatus and bonding method" was invented by Hideyuki Fukush... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,040, issued on July 14, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan). "Group-III element nitride semiconductor substrate" was invent... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,041, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods of forming superlattice structures using nanopa... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,042, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG ... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,043, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Reactive-ion deposition processes for dielectric mat... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,044, issued on July 14, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo). "Method of manufacturing semiconductor device, method of processing... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,045, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Deposition of oxide thin films" was invented by Suvi P.... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,046, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Doped silicon oxide for bottom-up deposition" was in... और पढ़ें